TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907P
BUZ908P
V
DSX
Drain Source Voltage
V
GSS
Gate Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation
@ T
case
= 25C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
JC
Thermal Resistance Junction Case
14V
-8A
-8A
125W
55 to 150C
150C
1C/W
MECHANICAL DATA
Dimensions in mm
1
3
2
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.
80 (
0
.
8
1
9
)
21.
46 (
0
.
8
4
5
)
6.
15
(
0
.
242)
BS
C
19.
81 (
0
.
7
8
0
)
20.
32 (
0
.
8
0
0
)
4.
50
(
0
.
177)
Ma
x
.
1.65 (0.0 65)
2.13 (0.0 84)
5.25 ( 0.215)
B S C
2.87 (0.1 13)
3.12 (0.1 23)
PCHANNEL
POWER MOSFET
FEATURES
HIGH SPEED SWITCHING
SEMEFAB DESIGNED AND DIFFUSED
HIGH VOLTAGE (220V & 250V)
HIGH ENERGY RATING
ENHANCEMENT MODE
INTEGRAL PROTECTION DIODES
COMPLIMENTARY NCHANNEL
BUZ902P & BUZ903P
Pin 1 Gate
TO-247
Pin 2 Source
Case Source
Pin 3 Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ907P
-220V
BUZ908P
-250V
V
V
V
V
V
mA
mA
S
-220
-250
14
-0.15
-1.5
-12
1.5
-10
-10
0.7
2
V
GS
= 10V
BUZ907P
I
D
= -10mA
BUZ908P
V
DS
= 0
I
G
= 100
A
V
DS
= -10V
I
D
= -100mA
V
GD
= 0
I
D
= -8A
V
GS
= -10
I
D
= -8A
V
DS
= -220V
BUZ907P
V
GS
= 10V
V
DS
= -250V
BUZ908P
V
DS
= -10V
I
D
= -3A
TEC
MAGNA
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
BUZ907P
BUZ908P
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
* Pulse Test: Pulse Width = 300
s , Duty Cycle
2%.
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turnon Time
t
off
Turn-off Time
TBA
TBA
TBA
TBA
TBA
V
DS
= -10V
f = 1MHz
V
DS
= -20V
I
D
= -5A
pF
ns
STATIC CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
D
G
S
BV
DSX
Drain Source Breakdown Voltage
BV
GSS
Gate Source Breakdown Voltage
V
GS(OFF)
Gate Source CutOff Voltage
V
DS(SAT)
*
Drain Source Saturation Voltage
R
DS(on)
*
Static Source Resistance
I
DSX
Drain Source CutOff Current
yfs*
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
(T
case
= 25C unless otherwise stated)
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